Synthesised holey graphene with potential application in energy storage
Paper ID : 1652-ICNS
Saeed Moeini *1, Ahmad Ramazani S.A.2, S. Khatiboleslam Sadrnezhad2
1Institute for Nanoscience and Nanotech, Sharif University of Tech, Tehran, Iran
2Sharif University of Technology
Holey graphene synthesized through the solution etching process at 100C by employing hydrogen peroxide as an etchant in the 2 hours. SEM micrographs manifest the formation of different size holes in the graphene sheets. Nitrogen adsorption-desorption isotherms show increased surface size, which is an indication for the hole formation in the graphene nanosheets. Raman spectra infer that hole formation is a result of etching defects in the graphene oxide sheets. This morphology is beneficial in many applications, including energy storage area. Moreover, the increased specific surface area fosters properties which are necessary for this area.
Graphene; Holey graphene; Nanomesh
Status : Abstract Accepted (Poster Presentation)