| SnS2/InSe heterostructure phototransistor |
| Paper ID : 1642-ICNS |
| Authors |
|
Seyedali Hosseini1, Ali Esfandiar2, Azam Iraji Zad *3 1INST, Sharif university of technology 2Department of Physics, Sharif University of Technology 3Institute for Nanoscience and Nanotechnology, Sharif University of Technology Department of Physics, Sharif University of Technology |
| Abstract |
| Nowadays, 2D materials have become particularly useful as electronic and optical devices. One of the most important benefits of these materials is the ability to build new structures by overlap of various 2d layers. In this study, by overlapping two SnS2 and InSe two-dimensional materials, a new phototransistor structure was constructed and the effect of light on red, green and blue colours was investigated |
| Keywords |
| InSe,SnS2, Heterostructure, photodetector |
| Status: Abstract Accepted (Oral Presentation) |
