| Facile and Repeatable Synthesis of Two-Dimensional WS2 for Nanoelectronic Applications |
| Paper ID : 1637-ICNS |
| Authors: |
|
zahra razaghi1, Abdolreza Simchi *2 1INST, Sharif University of Technology, Tehran, Iran 2Department of Materials Science and Engineering, Sharif University of Technology, Tehran, 14588, Iran |
| Abstract: |
| Fascinating properties of two-dimensional tungsten disulfide have recently attracted great researches among novel two-dimensional materials. Several superiority of this material, including direct band gap, high carrier mobility, higher on/off ratio and spin-orbit coupling than graphene, makes it an appropriate couple for graphene to substitute for silicon in nano-electronic industry. However, obtaining a facile, uniform, and large scale synthesis method, with the potential of surpassing the wet transferring barrier which is crucial in a high performance heterostructure device fabrication, is still under question. Herein, we report a bottom-up chemical vapour deposition approach to synthesis both two-dimensional few-layer and semi-crystalline bulk of WS2. Although for commercial applications a large-scale synthesis is needed, achieving a semi-crystalline bulk is important because of its ability to be easily exfoliate by using traditional scotch tape and can be transferred to the desired substrate. Remarkably, OM microscopy, AFM, Raman, and XRD characterizations of the as-grown material, reveals the high-quality few-layer triangular domains of WS2 with 20 µm lateral size synthesis. |
| Keywords: |
| Tungsten disulfide; Two-dimensional material; Chemical vapour deposition; Semi-crystal bulk |
| Status : Abstract Accepted (Poster Presentation) |