| Investigation of the metal-insulator transition in bilayer graphene by Abelian group schemes theory |
| Paper ID : 1610-ICNS |
| Authors |
|
Sohrab Behnia *1, Reza Habibpourbisafar2 1a Department of science, Urmia University of Technology, Urmia, Iran. 2Department of science, Urmia University of Technology, Urmia, Iran. |
| Abstract |
| Bilayer graphene (BLG) as a two-dimensional crystalline form of carbon, with a controllable band gap, has been proposed as an alternative to graphene for nanoscale electronics. In this paper, a single-electron transport in AA-stacking BLG is modelled in Abelian group schemes framework. In fact, Hamiltonian of two graphene layers are written in the adjacency matrices form of constructing Abelian group schemes of a honeycomb periodic lattice. Moreover, by using the eigenvalues of these matrices, we have numerically studied electronic dispersion metal-insulator transition in doped-BLG. At the threshold doping value C = 0.5%, we could see the insulator to metal transition, which has already been achieved. We have suggested that adjustment concentration of dopant atoms between graphene layers would be an eļ¬cient way of controlling metal-insulator transitions. |
| Keywords |
| Bilayer Graphene, Abelian group schemes, Quantum Chaos, Metal-Insulator Transitions |
| Status: Abstract Accepted (Poster Presentation) |
