|Investigation of the metal-insulator transition in bilayer graphene by Abelian group schemes theory|
|Paper ID : 1610-ICNS|
Sohrab Behnia *1, Reza Habibpourbisafar2|
1a Department of science, Urmia University of Technology, Urmia, Iran.
2Department of science, Urmia University of Technology, Urmia, Iran.
|Bilayer graphene (BLG) as a two-dimensional crystalline form of carbon, with a controllable band gap, has been proposed as an alternative to graphene for nanoscale electronics. In this paper, a single-electron transport in AA-stacking BLG is modelled in Abelian group schemes framework. In fact, Hamiltonian of two graphene layers are written in the adjacency matrices form of constructing Abelian group schemes of a honeycomb periodic lattice. Moreover, by using the eigenvalues of these matrices, we have numerically studied electronic dispersion metal-insulator transition in doped-BLG. At the threshold doping value C = 0.5%, we could see the insulator to metal transition, which has already been achieved. We have suggested that adjustment concentration of dopant atoms between graphene layers would be an eﬃcient way of controlling metal-insulator transitions.|
|Bilayer Graphene, Abelian group schemes, Quantum Chaos, Metal-Insulator Transitions|
|Status : Abstract Accepted (Poster Presentation)|