Electrochemical Fabrication of Vertically Aligned 2D SnS2/MoS2 Nanosheets
Paper ID : 1605-ICNS
Authors:
leyla Shooshtari1, Ali Esfandiar *2
1Physics, Sharif University of Technology, Tehran, Iran
2Department of Physics, Sharif University of Technology
Abstract:
Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and other applications due to their fascinating semiconducting properties. Electrochemical deposition is a straightforward and non-vacuum approach to deposit bulk MoS2 films onto FTO/glass substrate by immersing in an aqueous precursor solution of molybdenum and sulfur. Through post-treatment and sulfurization of as deposited MoS2 film and chemical vapor deposition (CVD), free vertically semi hexagonal SnS2/MoS2 nanosheets were fabricated on the substrates. The as deposited and sulfurized films were characterized by raman spectroscopy and X-ray diffraction. Mott-Schottky analysis of the films indicates that carrier concentration is about 1019 cm-3
Keywords:
TMD, Chemical vapour deposition, Electrodeposition, Mott-Schottky analysis
Status : Abstract Accepted (Oral Presentation)