Electrochemical Fabrication of Vertically Aligned 2D SnS2/MoS2 Nanosheets
Paper ID : 1605-ICNS
leyla Shooshtari1, Ali Esfandiar *2
1Physics, Sharif University of Technology, Tehran, Iran
2Department of Physics, Sharif University of Technology
Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and other applications due to their fascinating semiconducting properties. Electrochemical deposition is a straightforward and non-vacuum approach to deposit bulk MoS2 films onto FTO/glass substrate by immersing in an aqueous precursor solution of molybdenum and sulfur. Through post-treatment and sulfurization of as deposited MoS2 film and chemical vapor deposition (CVD), free vertically semi hexagonal SnS2/MoS2 nanosheets were fabricated on the substrates. The as deposited and sulfurized films were characterized by raman spectroscopy and X-ray diffraction. Mott-Schottky analysis of the films indicates that carrier concentration is about 1019 cm-3
TMD, Chemical vapour deposition, Electrodeposition, Mott-Schottky analysis
Status : Abstract Accepted (Oral Presentation)