| Electrochemical Fabrication of Vertically Aligned 2D SnS2/MoS2 Nanosheets |
| Paper ID : 1605-ICNS |
| Authors: |
|
leyla Shooshtari1, Ali Esfandiar *2 1Physics, Sharif University of Technology, Tehran, Iran 2Department of Physics, Sharif University of Technology |
| Abstract: |
| Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and other applications due to their fascinating semiconducting properties. Electrochemical deposition is a straightforward and non-vacuum approach to deposit bulk MoS2 films onto FTO/glass substrate by immersing in an aqueous precursor solution of molybdenum and sulfur. Through post-treatment and sulfurization of as deposited MoS2 film and chemical vapor deposition (CVD), free vertically semi hexagonal SnS2/MoS2 nanosheets were fabricated on the substrates. The as deposited and sulfurized films were characterized by raman spectroscopy and X-ray diffraction. Mott-Schottky analysis of the films indicates that carrier concentration is about 1019 cm-3 |
| Keywords: |
| TMD, Chemical vapour deposition, Electrodeposition, Mott-Schottky analysis |
| Status : Abstract Accepted (Oral Presentation) |