Performance Analysis of a Nanoscale Bi-Channel Vertical Tunnel Field Effect Transistor
Paper ID : 1599-ICNS
Authors:
SOMAYE MAHMODI *, Zahra Ahangari
Department of Electronic, Faculty of Electrical Engineering, Yadegar-e-Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran.
Abstract:
In this paper, the electrical characteristics of a novel vertical tunnel field effect transistor (TFET) with two parallel channel is introduced, which can considerably improve the on-state current. Unlike the conventional TFET, in which the band to band tunnelling window is limited in the regions close to the gate, in the proposed device, the tunnelling area is expanded along the source length. The gate workfunction and source doping density are critical design parameters that may considerably affect the device performance and requires to be optimized. In the proposed vertical TFET, the drain electric field has no impact on the tunnelling phenomena at the source-channel junction, which facilitates scaling of the device in nanoscale regime. The switching speed of the vertical TFET is considerably improved with on/off current ratio of 2.7e+8 and subthreshold swing of 2.25 mV/dec in comparison with the 4.8e+7 and subthreshold swing of 31mV/dec for the conventional TFET, respectively.
Keywords:
Tunnel Field Effect Transistor, Subthreshold Swing, Band to Band Tunnelling
Status : Abstract Accepted (Poster Presentation)