Towards defect-free graphene growth using low pressure chemical vapor deposition method
Paper ID : 1588-ICNS
Authors:
maryam mirzaei *1, Seyed Mahdi Hedayat2, Javad Karimi-Sabet3, Jafar Towfighi4
1Department of Chemical Engineering, Tarbiat Modares University, Tehran, Iran
2School of chemical engineeing, university of Tehran, Tebran, Iran
3Material and Nuclear Fuel Research School, Nuclear Science and Technology Research Institute, Tehran, Iran
4Scholl of chemical enginnering, Tarbiat Modares University, Tehran,
Abstract:
Large-area graphene film could be synthesized on a copper foil using low pressure chemical vapor deposition (LPCVD) method. Graphene is a promising material to revolutionize future electronics and membrane separation technology. So, growth of a defect-free graphene film is the need of the hour. Sometimes during the graphene growth using LPCVD technique, a high density of contamination which make graphene absolutely defective are produced in the its lattice. In this research, we have managed to synthesize a contamination-free graphene film on the copper foil surface using LPCVD process. We discovered the nature and source of the contamination and then prevents their production through controlling the operating conditions of the CVD process. These findings could pave the way of synthesizing a defect-free graphene film and also make the use of graphene in different applications feasible.
Keywords:
Graphene growth, LPCVD method, defect-free, operating conditions
Status : Abstract Accepted (Poster Presentation)