| Ultrafast transistor laser containing GRIN-SCH structure |
| Paper ID : 1584-ICNS |
| Authors: |
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Zahra Heidari *1, Seyed Mohammad Hosseini2 1University 2Photonics research lab, electrical engineering department, amirkabir university of technology, tehran, Iran |
| Abstract: |
| Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance free optical frequency response with -3dB bandwidth of more than 26 GHz has been achieved for single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) in left side of quantum well and AlξGa1-ξAs (ξ: 0.05→0) in right side of quantum well. All required parameters including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime has been calculated using self-consistent charge control model |
| Keywords: |
| Keywords: transistor laser, ultrafast, GRIN-SCH, -3db optical bandwidth, AlξGa1-ξAs |
| Status : Abstract Accepted (Poster Presentation) |