Ultrafast transistor laser containing GRIN-SCH structure
Paper ID : 1584-ICNS
Authors:
Zahra Heidari *1, Seyed Mohammad Hosseini2
1University
2Photonics research lab, electrical engineering department, amirkabir university of technology, tehran, Iran
Abstract:
Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance free optical frequency response with -3dB bandwidth of more than 26 GHz has been achieved for single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) in left side of quantum well and AlξGa1-ξAs (ξ: 0.05→0) in right side of quantum well. All required parameters including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime has been calculated using self-consistent charge control model
Keywords:
Keywords: transistor laser, ultrafast, GRIN-SCH, -3db optical bandwidth, AlξGa1-ξAs
Status : Abstract Accepted (Poster Presentation)