| Interfacial improvement in perovskite solar cell with CuInS2/carbon hole collector utilizing PMMA |
| Paper ID : 1565-ICNS |
| Authors |
|
Ehsan Ghavaminia *1, Fatemeh Behrouznejad2, Mozhdeh Forouznadeh3, Roohallah Khosroshahi4, Sara Darbari5, Nima Taghavinia6 1Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran 2Center of Micro-Nano System, SIST, Fudan University, Shanghai, China 3Department of Basic Sciences, Tarbiat Modares University,Tehran, 14115-175, Iran 4Institute for Nanoscience and Nanotechnology, Sharif University of Technology, Tehran, Iran 5Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran 6Department of Physics, Sharif university of technology, Tehran, Iran |
| Abstract |
| The conventional Spiro OMeTAD/Au hole collector in perovskite solar cells is replaced by low-cost CuInS2/Carbon hole collector. In addition to decreasing the cost, the complexity of the deposition of Au using a vacuum-based physical evaporation system is also removed. The carbon electrode can be deposited using doctor blading and printing methods. Decreasing the interfacial resistances and decreasing recombination are needed for improving the efficiency of this structure. Herein interfacial engineering at the interface of CuInS2 and perovskite light absorbent is done using poly methyl methacrylate. The filling factor and efficiency of perovskite solar cell with this structure are improved from 0.64 to 0.71 and 14.37% to 15.99% respectively. |
| Keywords |
| Perovskite solar cell, inorganic hole transport material, carbon electrode, charge transfer resistance, passivation |
| Status: Abstract Accepted (Poster Presentation) |
