| Design and Simulation of Double QW Slipping Effect on Optical Performance in GRIN Transistor-VCSEL |
| Paper ID : 1494-ICNS |
| Authors |
|
farnaz dana1, Hassan Kaatuzian *2, iman taghavi3, behzad namvar1 1Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran 15914, Iran 2Professor of Electrical Engineering Dept., Amirkabir University of Technology (Tehran Polytechnic) 3Research scientist of Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, 30332, USA |
| Abstract |
| We report the optoelectronic characteristics dependency of a transistor vertical-cavity surface-emitting laser (T-VCSEL) on quantum wells (QWs) location at room temperature. TVCSEL used in this work has double QWs and graded-index (GRIN) separate confinement heterostructure (SCH). Using a numerical simulation based on physical models, demonstrated that the optical output power enhanced significantly (%43), threshold current decreased %32, and modal gain decreased %10 due to moving the QWs toward the emitter-base junction. While by moving the QWs toward the collector optical output power decreased %44, threshold current increased %80, and modal gain increased %25. |
| Keywords |
| Transistor laser, T-VCSEL, slipping effect, graded index SCH, double Quantum-well |
| Status: Abstract Accepted (Poster Presentation) |
