On the impurity scattering in a semiconducting nanowire
Paper ID : 1329-ICNS
Authors:
Ghassem Ansaripour *1, Sara Yousefi2
1Department of physics, Bu-Ali Sina University, Hamedan
2Department of Physics, Bu-Ali Sina University, Hamedan, Iran
Abstract:
Abstract: In this article we investigate the limited mobility by ionized impurity scattering and from the uniform distribution of remote impurity for a one-dimensional semiconductor nanowire, which first calculated and then plotted. The effect of various relevant physical parameters such as temperature, radius and impurity density on mobility is investigated. Numerical results show that the mobility increases uniformly and slowly with increasing temperature due to background impurity scattering, while limited mobility increases rapidly with temperature due to scattering of remote impurities. It has also been shown that the mobility for both impurities decreases with increasing wire radius. Our results are in agreement with recent data.
Keywords:
Keywords: Quantum wire, Electron mobility, Ionized impurity scattering, Remote impurity scattering.
Status : Abstract Accepted (Poster Presentation)