| On the impurity scattering in a semiconducting nanowire |
| Paper ID : 1329-ICNS |
| Authors |
|
Ghassem Ansaripour *1, Sara Yousefi2 1Department of physics, Bu-Ali Sina University, Hamedan 2Department of Physics, Bu-Ali Sina University, Hamedan, Iran |
| Abstract |
| Abstract: In this article we investigate the limited mobility by ionized impurity scattering and from the uniform distribution of remote impurity for a one-dimensional semiconductor nanowire, which first calculated and then plotted. The effect of various relevant physical parameters such as temperature, radius and impurity density on mobility is investigated. Numerical results show that the mobility increases uniformly and slowly with increasing temperature due to background impurity scattering, while limited mobility increases rapidly with temperature due to scattering of remote impurities. It has also been shown that the mobility for both impurities decreases with increasing wire radius. Our results are in agreement with recent data. |
| Keywords |
| Keywords: Quantum wire, Electron mobility, Ionized impurity scattering, Remote impurity scattering. |
| Status: Abstract Accepted (Poster Presentation) |
