Synthesis of the New Silicon Nano Inverted Pyramids
Paper ID : 1308-ICNS
Authors:
Khatereh Soltaninejad *, Mahdieh Mehran
Department of Electrical Engineering, Shahid Bahonar University of Kerman, Kerman, Iran.
Abstract:
Nowadays silicon texturization is an important topic in the modern science and technology. There are different methods toward texturization of the silicon substrate which are wet and dry methods. Au, Ag or Cu-assisted chemical etching, are some of the wet methods for making the silicon surface, porous. Cu-assisted chemical etching is used for the formation of inverted pyramid-like structures on the silicon substrate. In this paper, new star- and flower-shape micro/nano inverted pyramids were synthesised on the (100) p-type silicon wafer. These micro/nano structures were fabricated using metal assisted chemical etching (MACE) of the silicon in the acidic solution of the hydrofluoric acid (HF), hydrogen peroxide (H2O2) and copper nitrate (Cu(No3)2). Moreover, effect of the temperature, time and concentration of the hydrofluoric acid on the formation of silicon inverted pyramids had been studied and results were compared. Morphology of the synthesised silicon inverted pyramid was investigated by the field emission scanning electron microscope (FE-SEM). We observed that, with the gradual increasing of each mentioned parameters, shape of the structures destroys gradually.
Keywords:
silicon; texturization; inverted pyramid; MACE.
Status : Abstract Accepted (Poster Presentation)