H2S gas sensing of Cr2O3-decorated ZnO heterostructures fabricated by a thermal evaporation and PVD method in a boundary layer of non-uniform thickness
Paper ID : 1304-ICNS
Authors:
Ahmad Kamalianfar *1, jamilah Saddat Molayzahedi2
1Department Of Physics, Farhangian University, Tehran, Iran
2bDepartment Of Science, Islamic Azad University, Takestan Branch
Abstract:
The effect of boundary layer thickness is investigated in growth of Cr2O3-decorated ZnO heterostructures using a combination of chemical and physical methods. In the first step, ZnO nano-structures were grown on silicon surface using a vapor transport method in a quartz tube. Next step, low concentration of Cr2O3 nano-particles were decorated on the ZnO nano-structures using a PVD method. To provide different boundary layer thicknesses, the substrates can be rotated at different angles by moving the vertical support forward or backward. We set the tilt angle to be 0°, 20° and 40°. Sensitivity and selectivity of H2S gas sensor based on Cr2O3-decorated ZnO heterostructures and its nano-structural, morphological, gas sensing properties were investigated.The sensing results of Cr2O3- ZnO hierarchical structures indicated that decoration of the Cr2O3 nano-particles on ZnO nanostructures significantly enhanced the response H2S up to 88 at low temperature. In addition, the response/recovery times of 33s/63s were measured for 40° sample.
Keywords:
ZnO-Cr2O3 thin films; selectivity; H2S; Sensor.
Status : Abstract Accepted (Poster Presentation)