| ``The Study Of N doped SnO2 by Experimental And Theorical Method |
| Paper ID : 1286-ICNS |
| Authors |
|
masoudeh maleki *1, seyed mohamad rozati2 1Department of Physics, Faculty of Science, Fouman and Shaft Branch, Islamic Azad University, Fouman, 43518-35875, Iran 2Department of Science, University of Guilan, Rasht, Iran |
| Abstract |
| In this study, we report the N doped SnO2 films with p-type conduction via air pressure chemical vapor deposition technique as an experimental method. Effect of substrate temperature and doping concentration on the electrical properties of the samples was studied by Hall Effect measurement. Changes in thin film morphology were analyzed by FESEM measurement. Based our study, achieving p type N doped SnO2 at low substrate temperatures and high level concentration of nitrogen was more possible. Then, nano structured nitrogen doped tin oxide were investigated by first principle calculations. First, band structure, density of states and projected density of states of pure tin oxide were evaluated. Then the effect of Nitrogen doping substituted instead of O atom, Sn atom were respectively compared with pure case. Nitrogen doping in all cases of substitution instead of O and Sn play the role of a p-type doping and in all cases the band gap decrease. |
| Keywords |
| Nitrogen doped SnO2 thin films, Substrate temperature, Air pressure CVD, DFT |
| Status: Abstract Accepted (Poster Presentation) |
