| conductance of mos2 barriers through graphene junctions |
| Paper ID : 1259-ICNS |
| Authors: |
| Zeinab Rashidian * |
| Abstract: |
| charge carriers in transition metal dichalcogenides have the spin and valley degrees of freedom. In this paper, we evaluate the conductance and valley polarized current through the junctions sandwiched between graphene sheets. We compute the conductance based on the scattering of Landauer buttiker formula in the presence of spin and valley Zeeman fields and an electric potential U. Our findings show that valley-resolved conductance reach 80% for and . Another result is that spin-resolved conductance achieved 80% for and . Charge carriers in transition metal dichalcogenides have the spin and valley degrees of freedom. In this paper, we evaluate the conductance and valley polarized current through the junctions sandwiched between graphene sheets. We compute the conductance based on the scattering of Landauer buttiker formula in the presence of spin and valley Zeeman fields and an electric potential U. Our findings show that valley-resolved conductance reach 80% for and . Another result is that spin-resolved conductance achieved 80% for and . |
| Keywords: |
| zeeman fields, mos2,silicene,valley resolved conductance |
| Status : Abstract Accepted (Poster Presentation) |