Charge conductance of spin transistor based on a single layer phosphorene
Paper ID : 1221-ICNS
Authors:
Leila . Dustkhah Heravan *
Department of condensed matter physics, Faculty of Physics, University of Tabriz, Tabriz,Iran
Abstract:
Phosphorene is a two dimensional material with a puckered hexagonal structure. The structure of each layer of BP has phosphorus atoms covalently coupled to three nearest neighbors. The resulting lattice resembles the honeycomb structure of graphene; however, in phosphorene the sp 3 hybridization of the 3s and 3p atomic orbitals creates ridges that result in a puckered surface. In the last ten years the properties of crystals consisting of one or a few atomic layers has been the focus of intense research. It possesses an anisotropic energy spectrum which affects all electrical and optical properties of this material. In this paper, we investigate a spin transistor based on the single layer phosphorene composed of three ferromagnetic barriers separated by two normal regions. We study charge conductance of this junction in terms of the middle ferromagnetic barrier width and its magnetization angle for parallel and antiparallel configuration of the outer magnetizations. We find that conductance shows periodic resonant peaks with varying and constant amplitudes in the parallel and antiparallel configurations, respectively.
Keywords:
Spin transistor; Phosphorene; Ferromagnet; Charge conductance
Status : Abstract Accepted (Poster Presentation)