| Modulation of a Nanoscale Spin Switch Based on DNA Chains via the External Stimuli |
| Paper ID : 1096-ICNS |
| Authors: |
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Samira Fathizadeh *1, Mostafa Salimi1, Sohrab Behnia2 1Department of Physics, Urmia University of Technology, Urmia, Iran 2Department of Physics, Urmia University of Technology, Urmia, Iran. |
| Abstract: |
| The spin-crossover phenomenon in molecular compounds is one of the bistable phenomena leading to switching between the high-spin and the low-spin states of the molecule which confers a memory effect on these systems. In this regard, we have tried to design and control a nanoscale spin switch based on DNA chains. We have used the magnetic field and applied voltage as external stimuli to control the switching behavior of the system. The obtained results based on a statistical analysis of system energy levels show that the system experiences a spin-crossover between high-spin and the low-spin states. It is observed that the switch turns on when the external magnetic field approaches to B=5 mT. After it, the system goes to an extended state due to increasing the applied voltage. Such spin-crossover behaviors can use in different applications such as sensors and active elements in displays and memory devices. Therefore, one can design and modulate a spin switch based on a molecular system. |
| Keywords: |
| Spin switch; memory device; DNA chain; nearest neighbor level spacing. |
| Status : Abstract Accepted (Poster Presentation) |